基于藍(lán)寶石襯底的全區(qū)域覆蓋的單層二硒化錫

簡(jiǎn)要描述：This product contains full area coverage SnSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnSe2 sheet.

更新時(shí)間：2024-06-03
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詳細(xì)介紹

This product contains full area coverage SnSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnSe2 sheet. Synthesized full area coverage monolayer SnSe2 is highly crystalline, some regions also display significant crystalline anisotropy.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Sapphire c-cut (0001)
Coverage	Full monolayer coverage
Electrical properties	1.5 eV Indirect Gap Semiconductor
Crystal structure	Hexagonal Phase
Unit cell parameters	a = b = 0.380, c = 0.612 nm, α = β = 90°, γ = 120°
Production method	Low Pressure Chemical Vapor Deposition (LPCVD)
Characterization methods	Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

Specifications

1) Identification. Full coverage 100% monolayer SnSe2 uniformly covered across c-cut sapphire

2) Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Smoothness. Atomically smooth surface with roughness < 0.15 nm.

4) Uniformity. Highly uniform surface morphology. SnSe2 monolayers uniformly cover across the sample.

5) Purity. 99.9995% purity as determined by nano-SIMS measurements

6) Reliability. Repeatable Raman and photoluminescence response

7) Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) Substrate. c-cut Sapphire but our research and development team can transfer SnSe2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

9) Defect profile. SnSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected SnSe2 using α-bombardment technique.

Supporting datasets [for 100% Full area SnSe2 monolayers on c-cut Sapphire]

Transmission electron images (TEM) acquired from CVD grown full area coverage SnSe2 monolayers on c-cut sapphire confirming high crystallinity

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer SnSe2 on c-cut sapphire

Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and shows the high crystallinity of the CVD samples. PL spectrum does not show any PL signal due to indirect band nature.

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